INFINEONIDP08E65D2XKSA1Switching Diode, 8A 650V PG-TO220-2-1 IDP08E65D2XKSA1
Diode Configuration SingleMaximum Forward Current 8AMaximum Reverse Voltage 650VKiểu lắp Through Hole
Liên hệ
The Infineon rapid switching emitter controlled diode. It is qualified according to JEDEC for target applications and junction operating temperature is 175°C.
Fast recovery
Soft switching
Low reverse recovery charge
Easy paralleling
Pb-free lead plating RoHS compliant