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INFINEONIGLD65R140D2AUMA1Gallium Nitride (GaN) Transistor 650 V 12 A 0.17 ohm 1.8 nC LSON Surface Mount

Continuous Drain Current Id 12ANo. of Pins 8PinsTransistor Case Style LSONTransistor Mounting Surface Mount
Mã nhà sản xuất
IGLD65R140D2AUMA1
Thương hiệu
Mã kho
4680827
Liên hệ
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Infineon IGLD65R140D2AUMA1. Gallium Nitride (GaN) Transistor 650 V 12 A 0.17 ohm 1.8 nC LSON Surface Mount

Features:

  • Gallium Nitride (GaN) Transistor
  • 650 V
  • 12 A
  • 0.17 ohm
  • 1.8 nC
  • LSON
  • Surface Mount
THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IGLD65R140D2AUMA1
Drain Source Voltage Vds 650V
Continuous Drain Current Id 12A
Drain Source On State Resistance 0.17ohm
Typical Gate Charge 1.8nC
Transistor Case Style LSON
Transistor Mounting Surface Mount
No. of Pins 8Pins
Product Range CoolGaN G5 Series

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