INFINEONIGLT65R045D2ATMA1IGLT65 GaN N-Channel MOSFET Transistor, 38 A, 650 V, 16-Pin PG-HDSOP-16 IGLT65R045D2ATMA1
Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 38AKiểu lắp Surface Mount
Liên hệ
The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.
650 V e-mode power transistor
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Low dynamic RDS(on)
High ESD robustness: 2 kV HBM - 1 kV CDM
Top-side cooled package
JEDEC qualified (JESD47, JESD22)