INFINEONIGLT65R110B2AUMA1Gallium Nitride (GaN) Transistor 650 V 0.14 ohm 1.61 nC HDSOP Surface Mount
No. of Pins 16PinsTransistor Case Style HDSOPTransistor Mounting Surface MountTypical Gate Charge 1.61nC
Liên hệ
Infineon IGLT65R110B2AUMA1. Gallium Nitride (GaN) Transistor 650 V 0.14 ohm 1.61 nC HDSOP Surface Mount
Features:
- Gallium Nitride (GaN) Transistor
- 650 V
- 0.14 ohm
- 1.61 nC
- HDSOP
- Surface Mount