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INFINEONIMBG65R033M2HIMBG65 SiC N-Channel MOSFET, 58 A, 650 V, 7-Pin PG-TO263-7 IMBG65R033M2H

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 58AKiểu lắp Surface Mount
Mã nhà sản xuất
IMBG65R033M2H
Thương hiệu
Quy cách đóng gói
1 cái
Mã kho
351961
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com 📄 Datasheet (PDF)

The Infineon CoolSiC MOSFET G2 in a D2PAK-7 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Enables BOM savings

Highest reliability

Enables top efficiency and power density

Ease of use

Full compatibility with existing vendors

Allows designs without fan or heatsink

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IMBG65R033M2H
Channel Type N
Maximum Continuous Drain Current 58A
Maximum Drain Source Voltage 650V
Series IMBG65
Package Type PG-TO263-7
Mounting Type Surface Mount
Pin Count 7
Channel Mode Enhancement
Transistor Material SiC
Number of Elements per Chip 1

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📄 Datasheet INFINEON IMBG65R033M2H (PDF)