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INFINEONIPB60R040CFD7ATMA1N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-220 FullPAK Wide Creepage Infineon IPB60R040CFD7ATMA1

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 18AMaximum Gate Threshold Voltage 4.5V
Mã nhà sản xuất
IPB60R040CFD7ATMA1
Thương hiệu
Quy cách đóng gói
Cuộn 1000 cái
Mã kho
2224886
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com 📄 Datasheet (PDF)

The Infineon 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R040CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors

Best-in-class hard commutation ruggedness

Highest reliability for resonant topologies

Highest efficiency with outstanding ease-of-use/performance trade-off

Enabling increased power density solutions

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IPB60R040CFD7ATMA1
Channel Type N
Maximum Continuous Drain Current 18A
Maximum Drain Source Voltage 650V
Package Type TO-220 FP
Series CoolMOS™
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 180mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4.5V
Transistor Material Si
Number of Elements per Chip 1

Giá: Liên hệ – gửi mã và số lượng về CV@chanhvinh.com để nhận báo giá nhanh.

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📄 Datasheet INFINEON IPB60R040CFD7ATMA1 (PDF)