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INFINEONIPB60R055CFD7ATMA1N-Channel MOSFET, 38 A, 600 V, 3-Pin D2PAK Infineon IPB60R055CFD7ATMA1

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 38AMaximum Gate Threshold Voltage 4.5V
Mã nhà sản xuất
IPB60R055CFD7ATMA1
Thương hiệu
Quy cách đóng gói
Cuộn 1000 cái
Mã kho
2224888
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com 📄 Datasheet (PDF)

The Infineon 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R055CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Lowest FOM RDS(on) x Qg and EOSS

Best-in-class RDS(on)/package combinations

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IPB60R055CFD7ATMA1
Channel Type N
Maximum Continuous Drain Current 38A
Maximum Drain Source Voltage 600V
Series CoolMOS™
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 55mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4.5V
Transistor Material Si
Number of Elements per Chip 1

Giá: Liên hệ – gửi mã và số lượng về CV@chanhvinh.com để nhận báo giá nhanh.

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📄 Datasheet INFINEON IPB60R055CFD7ATMA1 (PDF)