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INFINEONIPB60R099C7ATMA1N-Channel MOSFET, 22 A, 600 V, 3-Pin D2PAK Infineon IPB60R099C7ATMA1

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 22AMaximum Gate Threshold Voltage 4V
Mã nhà sản xuất
IPB60R099C7ATMA1
Thương hiệu
Quy cách đóng gói
Cuộn 1000 cái
Mã kho
2224892
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com 📄 Datasheet (PDF)

The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Reduced switching loss parameters such as Q G, C oss, E oss

Best-in-class figure of merit Q G*R DS(on)

Increased switching frequency

Best R (on)*A in the world

Rugged body diode

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IPB60R099C7ATMA1
Channel Type N
Maximum Continuous Drain Current 22A
Maximum Drain Source Voltage 600V
Series CoolMOS™ C7
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 99mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Number of Elements per Chip 1
Transistor Material Si

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📄 Datasheet INFINEON IPB60R099C7ATMA1 (PDF)