INFINEONIRF2204PBFHEXFET Silicon N-Channel MOSFET, 210 A, 40 V, 3-Pin TO-220AB IRF2204PBF
Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 210AKiểu lắp Through Hole
Liên hệ
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Ultra low on-resistance
Dynamic dv/dt rating
Repetitive avalanche allowed up to Tjmax