INFINEONIRFH5250TRPBFSilicon N-Channel MOSFET, 100 A, 25 V, 4-Pin PQFN 5X6 mm Infineon IRFH5250TRPBF
Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 100AMaximum Gate Threshold Voltage 2.35V
Liên hệ
The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for 'Metal Oxide Semiconductor Field-Effect Transistors'. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDSon (<1.15 mΩ)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg tested
Low Profile (<0.9 mm)