INFINEONIRFR2607ZTRPBFHEXFET Dual Silicon N-Channel MOSFET, 42 A, 75 V, 3-Pin DPAK IRFR2607ZTRPBF
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Ultra low on-resistance
Repetitive avalanche allowed up to Tjmax
















