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INFINEONIRL1404ZSPBFN-Channel MOSFET, 200 A, 40 V, 3-Pin D2PAK Infineon IRL1404ZSPBF

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 200AMaximum Gate Threshold Voltage 2.7V
Mã nhà sản xuất
IRL1404ZSPBF
Thương hiệu
Quy cách đóng gói
10 cái (băng liên tục)
Mã kho
6887171
Liên hệ
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N-Channel Power MOSFET 40V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRL1404ZSPBF
Channel Type N
Maximum Continuous Drain Current 200A
Maximum Drain Source Voltage 40V
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 3mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.7V
Minimum Gate Threshold Voltage 1.4V
Maximum Power Dissipation 230W
Transistor Configuration Single
Maximum Gate Source Voltage -16 V, +16 V
Width 9.65mm
Length 10.67mm
Maximum Operating Temperature +175°C
Typical Gate Charge @ Vgs 75 nC @ 5 V
Transistor Material Si
Number of Elements per Chip 1
Minimum Operating Temperature -55°C
Series HEXFET
Height 4.83mm

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📄 Datasheet INFINEON IRL1404ZSPBF (PDF)