INFINEONIRLR3915TRPBFHEXFET MOSFET, 61 A, 55 V DPAK IRLR3915TRPBF
Maximum Continuous Drain Current 61AKiểu lắp Surface Mount
Liên hệ
The Infineon HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Fast Switching