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INFINEONISZ0803NLSATMA1OptiMOS™ 5 N-Channel MOSFET, 37 A, 100 V, 8-Pin PQFN 3 x 3 ISZ0803NLSATMA1

Channel Type NMaximum Continuous Drain Current 37AMaximum Gate Threshold Voltage 2.3VKiểu lắp Surface Mount
Mã nhà sản xuất
ISZ0803NLSATMA1
Thương hiệu
Quy cách đóng gói
Cuộn 5000 cái
Mã kho
2326775
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com 📄 Datasheet (PDF)

The Infineon's OptiMOS PD power MOSFET 100 V, are designed targeting USB-PD and adapter applications. It's PQFN 3.3x3.3 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.

Logic level availability

Excellent thermal behaviour

100% avalanche tested

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. ISZ0803NLSATMA1
Channel Type N
Maximum Continuous Drain Current 37A
Maximum Drain Source Voltage 100V
Series OptiMOS™ 5
Package Type PQFN 3 x 3
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 0.0169 O, 0.0219 O
Maximum Gate Threshold Voltage 2.3V
Transistor Material Si
Number of Elements per Chip 1

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📄 Datasheet INFINEON ISZ0803NLSATMA1 (PDF)