INFINEON TECHNOLOGIES2ED2108S06FXUMA1IC: driver
The Infineon 650 V half-bridge gate driver with integrated bootstrap diode has unique Infineon Thin-Film-Silicon on Insulator (SOI)-Technology and Interlocking function with internal 540 ns dead time and programmable up to 5 us with external resistor. The High and Low Voltage Pins Separated for Maximum Creepage and Clearance (2ED21084S06J version) and has separate logic and power ground with the 2ED21084S06J version. Negative VS transient immunity of 100 V Floating channel designed for bootstrap operation Integrated ultra-fast, low resistance bootstrap diode Schmitt trigger inputs with hysteresis Dual package options of DSO-8 and DSO-14
The Infineon 650 V half-bridge gate driver with integrated bootstrap diode has unique Infineon Thin-Film-Silicon on Insulator (SOI)-Technology and Interlocking function with internal 540 ns dead time and programmable up to 5 us with external resistor. The High and Low Voltage Pins Separated for Maximum Creepage and Clearance (2ED21084S06J version) and has separate logic and power ground with the 2ED21084S06J version.
Negative VS transient immunity of 100 V
Floating channel designed for bootstrap operation
Integrated ultra-fast, low resistance bootstrap diode
Schmitt trigger inputs with hysteresis
Dual package options of DSO-8 and DSO-14