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INFINEON TECHNOLOGIES2N7002DWH6327XTSA1Transistor: N-MOSFET x2

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 300mAMaximum Gate Threshold Voltage 2.5V
Mã nhà sản xuất
2N7002DWH6327XTSA1
Thương hiệu
Mã kho
827-0002
Liên hệ
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Infineon OptiMOS™ Dual Power MOSFET MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS™ Dual Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. 2N7002DWH6327XTSA1
Channel Type N
Maximum Continuous Drain Current 300mA
Maximum Drain Source Voltage 60V
Package Type SOT-363
Series OptiMOS™
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 4Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.5V
Minimum Gate Threshold Voltage 1.5V
Maximum Power Dissipation 500 mW
Transistor Configuration Isolated
Maximum Gate Source Voltage -20 V, +20 V
Width 1.25mm
Number of Elements per Chip 2
Typical Gate Charge @ Vgs 0.4 nC @ 10 V
Length 2mm
Maximum Operating Temperature +150°C
Transistor Material Si
Height 0.8mm
Minimum Operating Temperature -55°C

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