INFINEON TECHNOLOGIESBAT1502ELE6327XTMA1Diode: Schottky switching
The Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02EL a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz. TSLP-2-19 package with a 0402 foot print Pb-free, RoHS compliant and halogen-free
The Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02EL a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
TSLP-2-19 package with a 0402 foot print
Pb-free, RoHS compliant and halogen-free