INFINEON TECHNOLOGIESBFP183E7764HTSA1Transistor: NPN
Maximum Collector Base Voltage VCBO 20VMaximum Collector Emitter Voltage Vceo 20VMaximum DC Collector Current Idc 65mAMaximum Emitter Base Voltage VEBO 2V
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The Infineon Silicon Bipolar RF Transistor is designed for low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA. This RF transistor has qualification report according to AEC Q101. Pb free package RoHS compliant
The Infineon Silicon Bipolar RF Transistor is designed for low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA. This RF transistor has qualification report according to AEC Q101.
Pb free package
RoHS compliant