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BFS481H6327XTSA1 2480690

INFINEON TECHNOLOGIESBFS481H6327XTSA1Transistor: NPN x2

Maximum Collector Base Voltage VCBO 20VMaximum Collector Emitter Voltage Vceo 20VMaximum DC Collector Current Idc 20mAMaximum Emitter Base Voltage VEBO 2V
Mã nhà sản xuất
BFS481H6327XTSA1
Thương hiệu
INFINEON TECHNOLOGIES
Mã kho
273-7309
Liên hệ
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The Infineon Silicon Bipolar RF Transistor is designed for high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. This RF transistor has qualification report according to AEC Q101. Halogen free Easy to use Pb free package RoHS compliant With visible leads

The Infineon Silicon Bipolar RF Transistor is designed for high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. This RF transistor has qualification report according to AEC Q101.

Halogen free

Easy to use

Pb free package

RoHS compliant

With visible leads

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. BFS481H6327XTSA1
Product Type RF Bipolar Transistor
Maximum DC Collector Current Idc 20mA
Maximum Collector Emitter Voltage Vceo 20V
Package Type SOT-363
Mount Type Surface
Transistor Configuration Two (Galvanic) Internal Isolated Transistors In One Package
Maximum Collector Base Voltage VCBO 20V
Maximum Power Dissipation Pd 175 mW
Minimum Operating Temperature -55°C
Maximum Emitter Base Voltage VEBO 2V
Minimum DC Current Gain hFE 70
Maximum Transition Frequency ft 8GHz
Pin Count 6
Maximum Operating Temperature 150°C
Series BFS481
Standards/Approvals RoHS Compliant
Automotive Standard AEC-Q101

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