INFINEON TECHNOLOGIESBSP149H6327XTSA1Transistor: N-MOSFET
Infineon SIPMOS® N-Channel MOSFETs Infineon SIPMOS® Series MOSFET, 660mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP149H6327XTSA1 This MOSFET is an essential component designed for a range of electronic applications, offering efficient performance within a compact surface mount package. It is well-suited for controlling automation circuits and is relevant for users in the electronics, electrical, and mechanical sectors. The depletion mode characteristic enhances control for switching applications, making it a suitable choice for engineers. Features & Benefits Maximum drain-source voltage of 200V for high voltage applications Continuous drain current capability of up to 660mA Utilises SIPMOS technology for consistent performance RoHS compliant with Pb-free lead plating dv/dt rated for improved resilience against voltage variations Applications Driver in automation systems Switching power supplies for energy management Automotive electronics compliant with AEC-Q101 standards What is the significance of the depletion mode characteristic? The depletion mode allows for efficient control of the MOSFET, which enables effective switching even at lower voltages, beneficial in diverse electronic designs. How does the device manage thermal challenges? It functions within a broad temperature range of -55°C to +150°C, ensuring dependable performance even under extreme thermal conditions, supported by its effective thermal management capabilities. What are the gate threshold voltage values for this component? The gate threshold voltage ranges from -2.1V to -1V, providing versatile switching options for different circuit requirements. What are the implications of the ESD Class rating? The ESD Class rating of 1B indicates a design that can withstand electrostatic discharge levels between 500V and 600V, enhancing the device's reliability in sensitive applications. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Infineon SIPMOS® N-Channel MOSFETs
Infineon SIPMOS® Series MOSFET, 660mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP149H6327XTSA1
This MOSFET is an essential component designed for a range of electronic applications, offering efficient performance within a compact surface mount package. It is well-suited for controlling automation circuits and is relevant for users in the electronics, electrical, and mechanical sectors. The depletion mode characteristic enhances control for switching applications, making it a suitable choice for engineers.
Features & Benefits
- Maximum drain-source voltage of 200V for high voltage applications
- Continuous drain current capability of up to 660mA
- Utilises SIPMOS technology for consistent performance
- RoHS compliant with Pb-free lead plating
- dv/dt rated for improved resilience against voltage variations
Applications
- Driver in automation systems
- Switching power supplies for energy management
- Automotive electronics compliant with AEC-Q101 standards
What is the significance of the depletion mode characteristic?
The depletion mode allows for efficient control of the MOSFET, which enables effective switching even at lower voltages, beneficial in diverse electronic designs.
How does the device manage thermal challenges?
It functions within a broad temperature range of -55°C to +150°C, ensuring dependable performance even under extreme thermal conditions, supported by its effective thermal management capabilities.
What are the gate threshold voltage values for this component?
The gate threshold voltage ranges from -2.1V to -1V, providing versatile switching options for different circuit requirements.
What are the implications of the ESD Class rating?
The ESD Class rating of 1B indicates a design that can withstand electrostatic discharge levels between 500V and 600V, enhancing the device's reliability in sensitive applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.