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INFINEON TECHNOLOGIESBSP613PH6327XTSA1Transistor: P-MOSFET

Channel Mode EnhancementChannel Type PForward Diode Voltage 1.1VMaximum Continuous Drain Current 2.9A
Mã nhà sản xuất
BSP613PH6327XTSA1
Thương hiệu
Mã kho
892-2236
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Infineon SIPMOS® P-Channel MOSFETs The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry. AEC Q101 Qualified (Please refer to datasheet) Pb-free lead plating, RoHS compliant MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

  • AEC Q101 Qualified (Please refer to datasheet)
  • Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. BSP613PH6327XTSA1
Channel Type P
Maximum Continuous Drain Current 2.9A
Maximum Drain Source Voltage 60V
Series SIPMOS®
Package Type SOT-223
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 130mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2.1V
Maximum Power Dissipation 10.8W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Length 40mm
Number of Elements per Chip 1
Width 40mm
Transistor Material Si
Maximum Operating Temperature +175°C
Typical Gate Charge @ Vgs 22 nC @ 10 V
Height 1.5mm
Minimum Operating Temperature -55°C
Forward Diode Voltage 1.1V

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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