INFINEON TECHNOLOGIESBSR92PH6327XTSA1Transistor: P-MOSFET

Channel Mode EnhancementChannel Type PForward Diode Voltage 1.2VMaximum Continuous Drain Current 140mA

Mã nhà sản xuất

BSR92PH6327XTSA1

Thương hiệu

INFINEON TECHNOLOGIES

Mã kho

170-2354

Liên hệ

📩 Liên hệ để có giá tốt: CV@chanhvinh.com

All products in small signal packages are suitable for automotive applications Infineon's highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics Enhancement mode Pb-free lead plating Target Applications: Automotive Consumer DC-DC eMobility Motor control Notebook Onboard charger

All products in small signal packages are suitable for automotive applications

Infineon's highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics

Enhancement mode

Pb-free lead plating

Target Applications:

Automotive

Consumer

DC-DC

eMobility

Motor control

Notebook

Onboard charger

THÔNG SỐ KỸ THUẬT
Manufacturer	Infineon
Manufacturer Part No.	BSR92PH6327XTSA1
Channel Type	P
Maximum Continuous Drain Current	140mA
Maximum Drain Source Voltage	250V
Package Type	SC-59
Series	SIPMOS®
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	20Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	500 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	20V
Width	1.6mm
Maximum Operating Temperature	+150°C
Length	3mm
Typical Gate Charge @ Vgs	3.6 nC @ 10 V
Number of Elements per Chip	1
Height	1.1mm
Automotive Standard	AEC-Q101
Minimum Operating Temperature	-55°C
Forward Diode Voltage	1.2V

THÔNG SỐ KỸ THUẬT

Manufacturer

Infineon

Manufacturer Part No.

BSR92PH6327XTSA1

Channel Type

Maximum Continuous Drain Current

140mA

Maximum Drain Source Voltage

250V

Package Type

SC-59

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

Maximum Drain Source Resistance

20Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

Minimum Gate Threshold Voltage

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

20V

Width

1.6mm

Maximum Operating Temperature

+150°C

Length

3mm

Typical Gate Charge @ Vgs

3.6 nC @ 10 V

Number of Elements per Chip

Height

1.1mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55°C

Forward Diode Voltage

1.2V

INFINEON TECHNOLOGIESBSR92PH6327XTSA1Transistor: P-MOSFET

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