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INFINEON TECHNOLOGIESBSS127H6327XTSA2Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 21mAMaximum Gate Threshold Voltage 2.6V
Mã nhà sản xuất
BSS127H6327XTSA2
Thương hiệu
Mã kho
753-2832
Liên hệ
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Infineon SIPMOS® N-Channel MOSFETs MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. BSS127H6327XTSA2
Channel Type N
Maximum Continuous Drain Current 21mA
Maximum Drain Source Voltage 600V
Series SIPMOS®
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 600Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.6V
Minimum Gate Threshold Voltage 1.4V
Maximum Power Dissipation 500 mW
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 0.65 nC @ 10 V
Length 2.9mm
Maximum Operating Temperature +150°C
Transistor Material Si
Width 1.3mm
Height 1mm
Minimum Operating Temperature -55°C

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