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INFINEON TECHNOLOGIESBSS83PH6327XTSA1Transistor: P-MOSFET

Channel Mode EnhancementChannel Type PMaximum Continuous Drain Current 330mAMaximum Gate Threshold Voltage 2V
Mã nhà sản xuất
BSS83PH6327XTSA1
Thương hiệu
Mã kho
753-2857
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Infineon SIPMOS® P-Channel MOSFETs The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry. AEC Q101 Qualified (Please refer to datasheet) Pb-free lead plating, RoHS compliant MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

  • AEC Q101 Qualified (Please refer to datasheet)
  • Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. BSS83PH6327XTSA1
Channel Type P
Maximum Continuous Drain Current 330mA
Maximum Drain Source Voltage 60V
Package Type SOT-23
Series SIPMOS®
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 3Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 360 mW
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Width 1.3mm
Number of Elements per Chip 1
Transistor Material Si
Length 2.9mm
Typical Gate Charge @ Vgs 2.38 nC @ 10 V
Maximum Operating Temperature +150°C
Minimum Operating Temperature -55°C
Height 1mm

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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