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INFINEON TECHNOLOGIESBSS87H6327FTSA1Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 260mAMaximum Gate Threshold Voltage 1.8V
Mã nhà sản xuất
BSS87H6327FTSA1
Thương hiệu
Mã kho
752-8249
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Infineon SIPMOS® N-Channel MOSFETs MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. BSS87H6327FTSA1
Channel Type N
Maximum Continuous Drain Current 260mA
Maximum Drain Source Voltage 240V
Series SIPMOS®
Package Type SOT-89
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 7.5Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1.8V
Minimum Gate Threshold Voltage 0.8V
Maximum Power Dissipation 1W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Length 4.5mm
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 3.7 nC @ 10 V
Maximum Operating Temperature +150°C
Width 2.5mm
Transistor Material Si
Minimum Operating Temperature -55°C
Height 1.5mm

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