INFINEON TECHNOLOGIESFM24V01A-GIC: FRAM memory
128-Kbit ferroelectric random access memory (F-RAM) logically organized as 16K x 8 High-endurance 100 trillion (1014) read/writes 151-year data retention NoDelay™ writes Advanced high-reliability ferroelectric process ■ Fast two-wire serial interface (I 2C) Up to 3.4-MHz frequency[1] Direct hardware replacement for serial EEPROM Supports legacy timings for 100 kHz and 400 kHz Device ID Manufacturer ID and Product ID Low power consumption 175-A active current at 100 kHz 150-A standby current 8-A sleep mode current Low-voltage operation: VDD = 2.0 V to 3.6 V Industrial temperature: –40 °C to +85 °C 8-pin small outline integrated circuit (SOIC) package
128-Kbit ferroelectric random access memory (F-RAM)
logically organized as 16K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
■ Fast two-wire serial interface (I
2C)
Up to 3.4-MHz frequency[1]
Direct hardware replacement for serial EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Device ID
Manufacturer ID and Product ID
Low power consumption
175-A active current at 100 kHz
150-A standby current
8-A sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package