INFINEON TECHNOLOGIESFM24V02A-GIC: FRAM memory

FRAM, Cypress Semiconductor Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption 256-Kbit ferroelectric random access memory (F-RAM logically organized as 32K x 8 High-endurance 100 trillion (1014) read/writes 151-year data retention (See the Data Retention an Endurance table) NoDelay™ writes Advanced high-reliability ferroelectric process Fast two-wire serial interface (I2C) Up to 3.4-MHz frequency[1] Direct hardware replacement for serial EEPROM Supports legacy timings for 100 kHz and 400 kHz Device ID Manufacturer ID and Product ID Low power consumption 175-μA active current at 100 kHz 150-μA standby current 8-μA sleep mode current Low-voltage operation: VDD = 2.0 V to 3.6 V Industrial temperature: –40 °C to +85 °C 8-pin small outline integrated circuit (SOIC) package FRAM (Ferroelectric RAM) FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.