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INFINEON TECHNOLOGIESIRF1018EPBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 79AMaximum Gate Threshold Voltage 4V
Mã nhà sản xuất
IRF1018EPBF
Thương hiệu
Mã kho
688-6800
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon Motor Control MOSFET Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications. Synchronous Rectifier MOSFET A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

Motor Control MOSFET

Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET

A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRF1018EPBF
Channel Type N
Maximum Continuous Drain Current 79A
Maximum Drain Source Voltage 60V
Series HEXFET
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 8mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 110W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Transistor Material Si
Maximum Operating Temperature +175°C
Number of Elements per Chip 1
Width 4.83mm
Typical Gate Charge @ Vgs 46 nC @ 10 V
Length 10.67mm
Height 9.02mm
Minimum Operating Temperature -55°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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