Skip to content

INFINEON TECHNOLOGIESIRF1310NPBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 42AMaximum Gate Threshold Voltage 4V
Mã nhà sản xuất
IRF1310NPBF
Thương hiệu
Mã kho
541-1506
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

N-Channel Power MOSFET 100V, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRF1310NPBF
Channel Type N
Maximum Continuous Drain Current 42A
Maximum Drain Source Voltage 100V
Package Type TO-220AB
Series HEXFET
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 36mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 160W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Width 4.69mm
Typical Gate Charge @ Vgs 110 nC @ 10 V
Transistor Material Si
Maximum Operating Temperature +175°C
Length 10.54mm
Number of Elements per Chip 1
Height 8.77mm
Minimum Operating Temperature -55°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

Compare products

Select 2 or 3 items to compare

Select first item to compare

Select second item to compare

Select third item to compare

Compare