INFINEON TECHNOLOGIESIRF2805PBFTransistor: N-MOSFET
N-Channel Power MOSFET 55V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Infineon HEXFET Series MOSFET, 75A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRF2805PBF This power MOSFET delivers excellent performance for various electronic applications. Its robust specifications are designed for industrial environments, ensuring both reliability and efficiency. With low on-resistance, this component supports high current capability, making it suitable for advanced circuits. Features & Benefits Supports a maximum continuous drain current of 75A Enhances efficiency with a low RDS(on) of 4.7mΩ Compatible with +20 V/-20 V gate-source voltage for improved flexibility Capable of fast switching speeds to meet dynamic performance needs Supports repetitive avalanche handling for operational resilience Applications Used in industrial motor drives for effective power control Suitable for power management in automation systems Employed in renewable energy systems for efficient switching Utilised in high-performance and durable power tools Applicable in battery management systems for electric vehicles What is the maximum temperature this component can withstand? It can operate within a temperature range of -55°C to +175°C for performance in extreme conditions. How does this MOSFET handle high current applications? It is designed to manage a continuous drain current of 75A, making it suitable for high current demands. Can it be used in applications with fast switching requirements? Yes, this MOSFET supports fast switching speeds, ideal for applications requiring dynamic performance. Is this device suitable for use in power inverters? Yes, its thermal stability and capacity for high current handling make it appropriate for power inverter applications in renewable energy systems. What are the implications of its low on-resistance? The low RDS(on) reduces power losses during operation, contributing to improved efficiency and thermal performance. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 75A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRF2805PBF
This power MOSFET delivers excellent performance for various electronic applications. Its robust specifications are designed for industrial environments, ensuring both reliability and efficiency. With low on-resistance, this component supports high current capability, making it suitable for advanced circuits.
Features & Benefits
- Supports a maximum continuous drain current of 75A
- Enhances efficiency with a low RDS(on) of 4.7mΩ
- Compatible with +20 V/-20 V gate-source voltage for improved flexibility
- Capable of fast switching speeds to meet dynamic performance needs
- Supports repetitive avalanche handling for operational resilience
Applications
- Used in industrial motor drives for effective power control
- Suitable for power management in automation systems
- Employed in renewable energy systems for efficient switching
- Utilised in high-performance and durable power tools
- Applicable in battery management systems for electric vehicles
What is the maximum temperature this component can withstand?
It can operate within a temperature range of -55°C to +175°C for performance in extreme conditions.
How does this MOSFET handle high current applications?
It is designed to manage a continuous drain current of 75A, making it suitable for high current demands.
Can it be used in applications with fast switching requirements?
Yes, this MOSFET supports fast switching speeds, ideal for applications requiring dynamic performance.
Is this device suitable for use in power inverters?
Yes, its thermal stability and capacity for high current handling make it appropriate for power inverter applications in renewable energy systems.
What are the implications of its low on-resistance?
The low RDS(on) reduces power losses during operation, contributing to improved efficiency and thermal performance.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.