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INFINEON TECHNOLOGIESIRF3205STRLPBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 110AMaximum Gate Threshold Voltage 4V
Mã nhà sản xuất
IRF3205STRLPBF
Thương hiệu
Mã kho
831-2809
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

N-Channel Power MOSFET 55V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRF3205STRLPBF
Channel Type N
Maximum Continuous Drain Current 110A
Maximum Drain Source Voltage 55V
Package Type D2PAK (TO-263)
Series HEXFET
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 8mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 200W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Width 9.65mm
Transistor Material Si
Maximum Operating Temperature +175°C
Number of Elements per Chip 1
Length 10.67mm
Typical Gate Charge @ Vgs 146 nC @ 10 V
Minimum Operating Temperature -55°C
Height 4.83mm

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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