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INFINEON TECHNOLOGIESIRF7105TRPBFTransistor: N/P-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 2.3 AMaximum Gate Threshold Voltage 3V
Mã nhà sản xuất
IRF7105TRPBF
Thương hiệu
Mã kho
826-8829
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Dual N/P-Channel Power MOSFET, Infineon Infineon's dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Dual N/P-Channel Power MOSFET, Infineon

Infineon's dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRF7105TRPBF
Channel Type N, P
Maximum Continuous Drain Current 2.3 A, 3.5 A
Maximum Drain Source Voltage 25V
Package Type SOIC
Series HEXFET
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 160 mΩ, 400 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 2W
Transistor Configuration Isolated
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 2
Length 5mm
Maximum Operating Temperature +150°C
Typical Gate Charge @ Vgs 10 nC @ 10 V, 9.4 nC @ 10 V
Width 4mm
Transistor Material Si
Height 1.5mm
Minimum Operating Temperature -55°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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