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INFINEON TECHNOLOGIESIRF7309TRPBFTransistor: N/P-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 3 AMaximum Gate Threshold Voltage 1V
Mã nhà sản xuất
IRF7309TRPBF
Thương hiệu
Mã kho
826-8866
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Dual N/P-Channel Power MOSFET, Infineon Infineon's dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Dual N/P-Channel Power MOSFET, Infineon

Infineon's dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRF7309TRPBF
Channel Type N, P
Maximum Continuous Drain Current 3 A, 4 A
Maximum Drain Source Voltage 30V
Series HEXFET
Package Type SOIC
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 80 mΩ, 160 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 1.4W
Transistor Configuration Isolated
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 2
Width 4mm
Length 5mm
Typical Gate Charge @ Vgs 25 nC @ 4.5 V
Maximum Operating Temperature +150°C
Transistor Material Si
Minimum Operating Temperature -55°C
Height 1.5mm

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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