INFINEON TECHNOLOGIESIRF7342TRPBFTransistor: P-MOSFET x2
P-Channel Power MOSFET 40V to 55V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Infineon HEXFET Series MOSFET, 3.4A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7342TRPBF This power MOSFET is intended for efficient power management in various electronic devices. Featuring a P-channel configuration, it is suitable for high-performance switching and amplification operations. Its robust specifications meet the essential requirements of engineers and designers in the automation and electrical sectors. Features & Benefits Maximum continuous drain current of 3.4A Drain-source voltage tolerance of up to 55V Surface mount design allows for straightforward installations Low maximum drain-source resistance improves energy efficiency Gate threshold voltage of 1 V promotes dependable switching Applications Power management circuits for improved energy utilisation Automation equipment requiring robust switching capabilities Suitable for motor control systems Used in power converters for electronics Common in battery management systems What are the thermal limits for operation? It operates effectively within a temperature range of -55°C to +150°C, ensuring reliability in various environments. How does this component enhance circuit efficiency? The low Rds(on) value reduces power loss during operation, thereby enhancing overall circuit efficiency. Can this MOSFET handle pulsed currents? Yes, it can accommodate pulsed drain currents of up to 27A, suitable for transient conditions. What type of packaging is it available in? It is available in an SO-8 surface mount package, optimising layout flexibility and manufacturing processes. Is there a specific gate voltage for optimal performance? The gate-to-source voltage should ideally be maintained at ±20V for optimal performance and longevity of the device. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 3.4A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7342TRPBF
This power MOSFET is intended for efficient power management in various electronic devices. Featuring a P-channel configuration, it is suitable for high-performance switching and amplification operations. Its robust specifications meet the essential requirements of engineers and designers in the automation and electrical sectors.
Features & Benefits
- Maximum continuous drain current of 3.4A
- Drain-source voltage tolerance of up to 55V
- Surface mount design allows for straightforward installations
- Low maximum drain-source resistance improves energy efficiency
- Gate threshold voltage of 1 V promotes dependable switching
Applications
- Power management circuits for improved energy utilisation
- Automation equipment requiring robust switching capabilities
- Suitable for motor control systems
- Used in power converters for electronics
- Common in battery management systems
What are the thermal limits for operation?
It operates effectively within a temperature range of -55°C to +150°C, ensuring reliability in various environments.
How does this component enhance circuit efficiency?
The low Rds(on) value reduces power loss during operation, thereby enhancing overall circuit efficiency.
Can this MOSFET handle pulsed currents?
Yes, it can accommodate pulsed drain currents of up to 27A, suitable for transient conditions.
What type of packaging is it available in?
It is available in an SO-8 surface mount package, optimising layout flexibility and manufacturing processes.
Is there a specific gate voltage for optimal performance?
The gate-to-source voltage should ideally be maintained at ±20V for optimal performance and longevity of the device.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.