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INFINEON TECHNOLOGIESIRF7490TRPBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 5.4AMaximum Gate Threshold Voltage 20V
Mã nhà sản xuất
IRF7490TRPBF
Thương hiệu
Mã kho
220-7479
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

The Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing. Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100KHz Industry standard surface-mount power package Capable of being wave-soldered

The Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100KHz

Industry standard surface-mount power package

Capable of being wave-soldered

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRF7490TRPBF
Channel Type N
Maximum Continuous Drain Current 5.4A
Maximum Drain Source Voltage 100V
Package Type SO-8
Series HEXFET
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 0.039 O
Channel Mode Enhancement
Maximum Gate Threshold Voltage 20V
Number of Elements per Chip 2

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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