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INFINEON TECHNOLOGIESIRF7854TRPBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.3VMaximum Continuous Drain Current 10A
Mã nhà sản xuất
IRF7854TRPBF
Thương hiệu
Mã kho
130-0961
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

N-Channel Power MOSFET 60V to 80V, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRF7854TRPBF
Channel Type N
Maximum Continuous Drain Current 10A
Maximum Drain Source Voltage 80V
Package Type SOIC
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 13.4mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4.9V
Minimum Gate Threshold Voltage 3V
Maximum Power Dissipation 2.5W
Maximum Gate Source Voltage -20 V, +20 V
Width 4mm
Length 5mm
Typical Gate Charge @ Vgs 27 nC @ 10 V
Maximum Operating Temperature +150°C
Number of Elements per Chip 1
Series HEXFET
Height 1.5mm
Minimum Operating Temperature -55°C
Forward Diode Voltage 1.3V

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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