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INFINEON TECHNOLOGIESIRF8788TRPBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1VMaximum Continuous Drain Current 24A
Mã nhà sản xuất
IRF8788TRPBF
Thương hiệu
Mã kho
130-0967
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

N-Channel Power MOSFET 30V, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRF8788TRPBF
Channel Type N
Maximum Continuous Drain Current 24A
Maximum Drain Source Voltage 30V
Package Type SOIC
Series HEXFET
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 3.8mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.35V
Minimum Gate Threshold Voltage 1.35V
Maximum Power Dissipation 2.5W
Maximum Gate Source Voltage -20 V, +20 V
Width 4mm
Number of Elements per Chip 1
Maximum Operating Temperature +150°C
Typical Gate Charge @ Vgs 44 nC @ 4.5 V
Length 5mm
Minimum Operating Temperature -55°C
Forward Diode Voltage 1V
Height 1.5mm

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