INFINEON TECHNOLOGIESIRF9530NPBFTransistor: P-MOSFET
P-Channel Power MOSFET 100V to 150V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Infineon HEXFET Series MOSFET, 14A Maximum Continuous Drain Current, 79W Maximum Power Dissipation - IRF9530NPBF This MOSFET is designed for high-efficiency applications in the automation, electronics, and electrical sectors. Its P-channel configuration enhances switching performance, making it vital for power management systems. The device operates effectively in various environments, delivering consistent performance under challenging conditions, making it an important component for engineers and designers seeking durability and efficiency. Features & Benefits Maximum continuous drain current of 14A for robust performance Compatible with drain-source voltages of up to 100V for versatility Low on-resistance of 200mΩ enhances power efficiency TO-220AB package design facilitates easy mounting and heat dissipation Enhancement mode operation ensures dependable switching performance High gate threshold voltage of 4V allows for effective control Applications Suitable for integration into power supply circuits Utilised in motor control systems for improved efficiency Applicable in power converters for enhanced energy management Ideal for power switching in electronic devices Employed in high current driver circuits for dependability How can the operating temperature range affect usage? The device operates effectively between -55°C and +175°C, enabling functionality in extreme conditions without compromising performance. What are the implications of the maximum power dissipation specification? With a maximum power dissipation of 79W, the component can manage substantial load demands, ensuring stable operation and longevity in high-performance settings. Can it be used in parallel configurations for increased current capacity? Yes, it can be arranged in parallel to distribute current loads effectively, provided that thermal management is suitably addressed. What precautions should be taken during installation? Proper heat sinking is essential to prevent overheating it is important to ensure that thermal resistance aligns with the system's specifications for long-term reliability. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
P-Channel Power MOSFET 100V to 150V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 14A Maximum Continuous Drain Current, 79W Maximum Power Dissipation - IRF9530NPBF
This MOSFET is designed for high-efficiency applications in the automation, electronics, and electrical sectors. Its P-channel configuration enhances switching performance, making it vital for power management systems. The device operates effectively in various environments, delivering consistent performance under challenging conditions, making it an important component for engineers and designers seeking durability and efficiency.
Features & Benefits
- Maximum continuous drain current of 14A for robust performance
- Compatible with drain-source voltages of up to 100V for versatility
- Low on-resistance of 200mΩ enhances power efficiency
- TO-220AB package design facilitates easy mounting and heat dissipation
- Enhancement mode operation ensures dependable switching performance
- High gate threshold voltage of 4V allows for effective control
Applications
- Suitable for integration into power supply circuits
- Utilised in motor control systems for improved efficiency
- Applicable in power converters for enhanced energy management
- Ideal for power switching in electronic devices
- Employed in high current driver circuits for dependability
How can the operating temperature range affect usage?
The device operates effectively between -55°C and +175°C, enabling functionality in extreme conditions without compromising performance.
What are the implications of the maximum power dissipation specification?
With a maximum power dissipation of 79W, the component can manage substantial load demands, ensuring stable operation and longevity in high-performance settings.
Can it be used in parallel configurations for increased current capacity?
Yes, it can be arranged in parallel to distribute current loads effectively, provided that thermal management is suitably addressed.
What precautions should be taken during installation?
Proper heat sinking is essential to prevent overheating
it is important to ensure that thermal resistance aligns with the system's specifications for long-term reliability.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.