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INFINEON TECHNOLOGIESIRF9540NSTRLPBFTransistor: P-MOSFET

Channel Mode EnhancementChannel Type PMaximum Continuous Drain Current 23AMaximum Gate Threshold Voltage 4V
Mã nhà sản xuất
IRF9540NSTRLPBF
Thương hiệu
Mã kho
827-3931
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

P-Channel Power MOSFET 100V to 150V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

P-Channel Power MOSFET 100V to 150V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRF9540NSTRLPBF
Channel Type P
Maximum Continuous Drain Current 23A
Maximum Drain Source Voltage 100V
Package Type D2PAK (TO-263)
Series HEXFET
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 117mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 110W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Typical Gate Charge @ Vgs 73 nC @ 10 V
Width 9.65mm
Transistor Material Si
Maximum Operating Temperature +150°C
Number of Elements per Chip 1
Length 10.67mm
Height 4.83mm
Minimum Operating Temperature -55°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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