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INFINEON TECHNOLOGIESIRFB260NPBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 56AKiểu lắp Through Hole
Mã nhà sản xuất
IRFB260NPBF
Thương hiệu
Mã kho
827-3938
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters. Fully characterized avalanche voltage and current

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRFB260NPBF
Channel Type N
Maximum Continuous Drain Current 56A
Maximum Drain Source Voltage 200V
Series HEXFET
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Channel Mode Enhancement
Number of Elements per Chip 1
Transistor Material Silicon

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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