INFINEON TECHNOLOGIESIRFB4310PBFTransistor: N-MOSFET
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon Motor Control MOSFET Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications. Synchronous Rectifier MOSFET A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems. Infineon HEXFET Series MOSFET, 130A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFB4310PBF This robust and efficient power transistor is designed for high-performance applications in automation, electronics, and the electrical industry. The N-channel technology provides advantages in power management and switching capabilities. Its operating temperature range of -55°C to +175°C enhances its versatility and reliability across various environments. Features & Benefits Supports up to 130A continuous drain current for substantial load demands Operates with a maximum voltage of 100 V for improved utility Low RDS(on) of 7 mΩ minimises power loss Features enhancement mode operation to enhance efficiency Integrated ruggedness with avalanche and dynamic dV/dt capabilities Fully characterised capacitance for precise performance optimisation Applications Utilised in high-efficiency synchronous rectification systems Employed within uninterruptible power supplies for dependable energy backup Suitable for high-speed power switching circuits Designed for hard-switched and high-frequency How does the low RDS(on) impact efficiency? The low RDS(on) reduces heat generation during operation, leading to enhanced power delivery efficiency. What is the significance of avalanche capability? Avalanche capability protects the device from excessive voltage spikes, promoting stable performance under challenging conditions. Can this device be used in high-frequency applications? Yes, this MOSFET is designed for high-frequency circuits, making it suitable for various advanced applications. What is the maximum current it can handle at elevated temperatures? At a case temperature of 100°C, the maximum continuous drain current can reach 92 A, ensuring dependable performance. How should it be mounted for optimal performance? It is recommended to mount the device on a flat greased surface to maximise thermal transfer to the heatsink. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
Infineon HEXFET Series MOSFET, 130A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFB4310PBF
This robust and efficient power transistor is designed for high-performance applications in automation, electronics, and the electrical industry. The N-channel technology provides advantages in power management and switching capabilities. Its operating temperature range of -55°C to +175°C enhances its versatility and reliability across various environments.
Features & Benefits
- Supports up to 130A continuous drain current for substantial load demands
- Operates with a maximum voltage of 100 V for improved utility
- Low RDS(on) of 7 mΩ minimises power loss
- Features enhancement mode operation to enhance efficiency
- Integrated ruggedness with avalanche and dynamic dV/dt capabilities
- Fully characterised capacitance for precise performance optimisation
Applications
- Utilised in high-efficiency synchronous rectification systems
- Employed within uninterruptible power supplies for dependable energy backup
- Suitable for high-speed power switching circuits
- Designed for hard-switched and high-frequency
How does the low RDS(on) impact efficiency?
The low RDS(on) reduces heat generation during operation, leading to enhanced power delivery efficiency.
What is the significance of avalanche capability?
Avalanche capability protects the device from excessive voltage spikes, promoting stable performance under challenging conditions.
Can this device be used in high-frequency applications?
Yes, this MOSFET is designed for high-frequency circuits, making it suitable for various advanced applications.
What is the maximum current it can handle at elevated temperatures?
At a case temperature of 100°C, the maximum continuous drain current can reach 92 A, ensuring dependable performance.
How should it be mounted for optimal performance?
It is recommended to mount the device on a flat greased surface to maximise thermal transfer to the heatsink.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.