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IRFB5620PBF 688-6973

INFINEON TECHNOLOGIESIRFB5620PBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 25AMaximum Gate Threshold Voltage 5V
Mã nhà sản xuất
IRFB5620PBF
Thương hiệu
INFINEON TECHNOLOGIES
Mã kho
688-6973
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Digital Audio MOSFET, Infineon Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Digital Audio MOSFET, Infineon

Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRFB5620PBF
Channel Type N
Maximum Continuous Drain Current 25A
Maximum Drain Source Voltage 200V
Package Type TO-220AB
Series HEXFET
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 73mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 5V
Minimum Gate Threshold Voltage 3V
Maximum Power Dissipation 14W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 25 nC @ 10 V
Transistor Material Si
Length 10.67mm
Width 4.83mm
Maximum Operating Temperature +175°C
Height 9.02mm
Minimum Operating Temperature -55°C

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