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INFINEON TECHNOLOGIESIRFB7446PBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 120AMaximum Gate Threshold Voltage 3.9V
Mã nhà sản xuất
IRFB7446PBF
Thương hiệu
Mã kho
776-9181
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

StrongIRFET™ Power MOSFET, Infineon Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRFB7446PBF
Channel Type N
Maximum Continuous Drain Current 120A
Maximum Drain Source Voltage 40V
Package Type TO-220AB
Series StrongIRFET
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 3.3mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3.9V
Minimum Gate Threshold Voltage 2.2V
Maximum Power Dissipation 99W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Width 4.83mm
Maximum Operating Temperature +175°C
Transistor Material Si
Typical Gate Charge @ Vgs 93 nC @ 10 V
Length 10.67mm
Minimum Operating Temperature -55°C
Height 16.51mm

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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