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INFINEON TECHNOLOGIESIRFH5210TRPBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.3VMaximum Continuous Drain Current 10A
Mã nhà sản xuất
IRFH5210TRPBF
Thương hiệu
Mã kho
130-0977
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

N-Channel Power MOSFET 100V, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRFH5210TRPBF
Channel Type N
Maximum Continuous Drain Current 10A
Maximum Drain Source Voltage 100V
Series HEXFET
Package Type PQFN 5 x 6
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 14.9mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 104W
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Width 6mm
Maximum Operating Temperature +150°C
Length 5mm
Typical Gate Charge @ Vgs 40 nC @ 10 V
Minimum Operating Temperature -55°C
Height 0.9mm
Forward Diode Voltage 1.3V

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