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INFINEON TECHNOLOGIESIRFML8244TRPBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 5.8AMaximum Gate Threshold Voltage 2.35V
Mã nhà sản xuất
IRFML8244TRPBF
Thương hiệu
Mã kho
737-7219
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

N-Channel Power MOSFET 12V to 25V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

N-Channel Power MOSFET 12V to 25V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRFML8244TRPBF
Channel Type N
Maximum Continuous Drain Current 5.8A
Maximum Drain Source Voltage 25V
Package Type SOT-23
Series HEXFET
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 41mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.35V
Minimum Gate Threshold Voltage 1.35V
Maximum Power Dissipation 1.25W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Length 3.04mm
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 5.4 nC @ 10 V
Width 1.4mm
Transistor Material Si
Maximum Operating Temperature +150°C
Minimum Operating Temperature -55°C
Height 1.02mm

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