INFINEON TECHNOLOGIESIRFP064NPBFTransistor: N-MOSFET

N-Channel Power MOSFET 55V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Infineon HEXFET Series MOSFET, 110A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRFP064NPBF This MOSFET represents a high-performance electronic component designed for efficient power management. It can handle a continuous drain current of 110A and a maximum drain-source voltage of 55V, making it suitable for use in automation, electronics, and electrical industries. The enhancement mode design ensures optimal performance under various conditions, highlighting its role in contemporary electronic systems. Features & Benefits Low on-resistance of 8mΩ enhances efficiency Maximum power dissipation of 200W ensures robust operation Capable of withstanding operating temperatures up to +175°C Versatile, compatible with both negative and positive gate-source voltages Single transistor configuration supports a variety of applications Applications Used in power supply circuits that require high efficiency Common in motor control systems for automation Appropriate for telecommunications equipment Effective in power conversion systems in industrial environments What is the maximum power dissipation for this component? The maximum power dissipation is 200W, which supports robust performance across diverse applications. Can it operate in high-temperature environments? Yes, it is capable of functioning effectively at temperatures up to +175°C, making it suitable for challenging conditions. What type of gate voltage is required for operation? This device operates with a maximum gate-source voltage range of -20V to +20V, allowing for flexible control options. How does the channel type influence its performance? The N-channel type is beneficial for applications needing efficient switching and high current handling. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.