Skip to content

INFINEON TECHNOLOGIESIRFP140NPBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.3VMaximum Continuous Drain Current 33A
Mã nhà sản xuất
IRFP140NPBF
Thương hiệu
Mã kho
541-1269
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

N-Channel Power MOSFET 100V, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRFP140NPBF This MOSFET plays a crucial role in improving efficiency and performance across various electronic applications. It is designed to accommodate high currents and voltages, offering dependable power management solutions in automation systems, electronics, and mechanical industries. Its ability to function under extreme conditions ensures versatility in numerous applications. Features & Benefits Maximum continuous drain current of 33A for enhanced load capabilities Drain-source voltage rating of up to 100V for effective performance Low maximum drain-source resistance of 52 mΩ for efficient operation Designed for power dissipation of 140W to manage thermal conditions Typical gate charge of 94 nC at 10V for rapid switching speeds Applications Reliable use in switching power supplies Motor control for accurate operation High current in power conversion systems Integration into power amplifiers for improved signal amplification What is the maximum voltage this component can handle? It withstands a maximum drain-source voltage of 100V, suitable for high-voltage applications. How does the gate charge affect the operation? A typical gate charge of 94 nC at 10V facilitates faster switching, enhancing circuit efficiency. What are the thermal characteristics of this component? It operates effectively between -55°C and +175°C, ensuring reliability in different environments. Can this component be used in automation projects? Yes, its high continuous current capacity and voltage ratings are ideal for various automation applications. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRFP140NPBF

This MOSFET plays a crucial role in improving efficiency and performance across various electronic applications. It is designed to accommodate high currents and voltages, offering dependable power management solutions in automation systems, electronics, and mechanical industries. Its ability to function under extreme conditions ensures versatility in numerous applications.

Features & Benefits

  • Maximum continuous drain current of 33A for enhanced load capabilities
  • Drain-source voltage rating of up to 100V for effective performance
  • Low maximum drain-source resistance of 52 mΩ for efficient operation
  • Designed for power dissipation of 140W to manage thermal conditions
  • Typical gate charge of 94 nC at 10V for rapid switching speeds

Applications

  • Reliable use in switching power supplies
  • Motor control for accurate operation
  • High current in power conversion systems
  • Integration into power amplifiers for improved signal amplification

What is the maximum voltage this component can handle?

It withstands a maximum drain-source voltage of 100V, suitable for high-voltage applications.

How does the gate charge affect the operation?

A typical gate charge of 94 nC at 10V facilitates faster switching, enhancing circuit efficiency.

What are the thermal characteristics of this component?

It operates effectively between -55°C and +175°C, ensuring reliability in different environments.

Can this component be used in automation projects?

Yes, its high continuous current capacity and voltage ratings are ideal for various automation applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRFP140NPBF
Channel Type N
Maximum Continuous Drain Current 33A
Maximum Drain Source Voltage 100V
Series HEXFET
Package Type TO-247AC
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 52mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 140W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Typical Gate Charge @ Vgs 94 nC @ 10 V
Transistor Material Si
Number of Elements per Chip 1
Length 15.9mm
Width 5.3mm
Maximum Operating Temperature +175°C
Minimum Operating Temperature -55°C
Forward Diode Voltage 1.3V
Height 20.3mm

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

Compare products

Select 2 or 3 items to compare

Select first item to compare

Select second item to compare

Select third item to compare

Compare