INFINEON TECHNOLOGIESIRFP250MPBFTransistor: N-MOSFET
N-Channel Power MOSFET 150V to 600V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IRFP250MPBF This N-channel MOSFET is designed for high performance and efficiency across a variety of applications. It offers a maximum continuous drain current of 30A and a drain-source voltage rating of 200V, making it suitable for tasks in the automation and electronics sectors. Its design ensures effective thermal performance, which enhances its use in electrical and mechanical industries. Features & Benefits Dynamic dv/dt rating ensures stability during operation Enhanced thermal capabilities, with an operating temperature of up to 175°C Low on-resistance reduces power losses Fully avalanche-rated, providing over-voltage protection Simple drive requirements for easier integration into designs Applications Suitable for high-frequency switching Ideal for power supplies and converters Applicable in motor control systems and industrial drives Utilised in renewable energy systems, such as solar inverters How is thermal performance managed in demanding environments? The thermal resistance characteristics are designed for efficient heat dissipation, allowing operation from -55°C to +175°C. What are the implications of the low Rds(on)? The low on-resistance results in lower power dissipation during conduction, enhancing overall system efficiency and reducing thermal stress on components. Can this device be used for parallel configurations? Yes, the design facilitates paralleling, increasing current capacity and improving thermal performance in high-power applications. What should be considered when selecting the gate drive voltage? A gate drive voltage between 2V and 4V is optimal for ensuring sufficient switching performance and preventing undesired operation. What measures are in place for over-voltage protection? The MOSFET is fully avalanche-rated, safeguarding against transient over-voltages and ensuring reliable operation in fluctuating conditions. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IRFP250MPBF
This N-channel MOSFET is designed for high performance and efficiency across a variety of applications. It offers a maximum continuous drain current of 30A and a drain-source voltage rating of 200V, making it suitable for tasks in the automation and electronics sectors. Its design ensures effective thermal performance, which enhances its use in electrical and mechanical industries.
Features & Benefits
- Dynamic dv/dt rating ensures stability during operation
- Enhanced thermal capabilities, with an operating temperature of up to 175°C
- Low on-resistance reduces power losses
- Fully avalanche-rated, providing over-voltage protection
- Simple drive requirements for easier integration into designs
Applications
- Suitable for high-frequency switching
- Ideal for power supplies and converters
- Applicable in motor control systems and industrial drives
- Utilised in renewable energy systems, such as solar inverters
How is thermal performance managed in demanding environments?
The thermal resistance characteristics are designed for efficient heat dissipation, allowing operation from -55°C to +175°C.
What are the implications of the low Rds(on)?
The low on-resistance results in lower power dissipation during conduction, enhancing overall system efficiency and reducing thermal stress on components.
Can this device be used for parallel configurations?
Yes, the design facilitates paralleling, increasing current capacity and improving thermal performance in high-power applications.
What should be considered when selecting the gate drive voltage?
A gate drive voltage between 2V and 4V is optimal for ensuring sufficient switching performance and preventing undesired operation.
What measures are in place for over-voltage protection?
The MOSFET is fully avalanche-rated, safeguarding against transient over-voltages and ensuring reliable operation in fluctuating conditions.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.