INFINEON TECHNOLOGIESIRFP3703PBFTransistor: N-MOSFET
N-Channel Power MOSFET 30V, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Infineon HEXFET Series MOSFET, 210A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRFP3703PBF This high current MOSFET is essential for applications that require efficient power management. Its HEXFET technology ensures it meets performance criteria across various industrial and electronic uses. As an N-channel device, it provides substantial current handling and effective voltage control in robust and efficient semiconductor systems. Features & Benefits Handles up to 210A continuous drain current Low on-resistance of 2.8mΩ minimises power losses Optimised for high-speed operations with quick turn-on and turn-off Single transistor configuration simplifies circuit design Applications Used in power management systems for efficient switching Applied in synchronous rectification to enhance energy conversion Integrated in industrial automation equipment for dependable operation Utilised in power supplies requiring high efficiency and minimal heat generation Suitable for automotive needing durable components What type of applications is this device best suited for? This device excels in power management, particularly in synchronous rectification and industrial automation, owing to its high current handling and voltage capabilities. How does the high continuous drain current affect performance? The ability to manage 210A continuously allows for efficient energy transfer while reducing heat generation, thereby improving overall performance and reliability. What are the implications of the low on-resistance? A low on-resistance of 2.8mΩ greatly diminishes power losses during operation, enhancing efficiency and aiding in thermal management under high-load conditions. What operating temperature range can this device handle? It functions effectively over a wide temperature span from -55°C to +175°C, making it suitable for various demanding environments. How does the MOSFET's configuration improve circuit design? The single transistor configuration streamlines circuit layouts, reducing the number of required components while ensuring dependable operation in high-speed applications. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 210A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRFP3703PBF
This high current MOSFET is essential for applications that require efficient power management. Its HEXFET technology ensures it meets performance criteria across various industrial and electronic uses. As an N-channel device, it provides substantial current handling and effective voltage control in robust and efficient semiconductor systems.
Features & Benefits
- Handles up to 210A continuous drain current
- Low on-resistance of 2.8mΩ minimises power losses
- Optimised for high-speed operations with quick turn-on and turn-off
- Single transistor configuration simplifies circuit design
Applications
- Used in power management systems for efficient switching
- Applied in synchronous rectification to enhance energy conversion
- Integrated in industrial automation equipment for dependable operation
- Utilised in power supplies requiring high efficiency and minimal heat generation
- Suitable for automotive needing durable components
What type of applications is this device best suited for?
This device excels in power management, particularly in synchronous rectification and industrial automation, owing to its high current handling and voltage capabilities.
How does the high continuous drain current affect performance?
The ability to manage 210A continuously allows for efficient energy transfer while reducing heat generation, thereby improving overall performance and reliability.
What are the implications of the low on-resistance?
A low on-resistance of 2.8mΩ greatly diminishes power losses during operation, enhancing efficiency and aiding in thermal management under high-load conditions.
What operating temperature range can this device handle?
It functions effectively over a wide temperature span from -55°C to +175°C, making it suitable for various demanding environments.
How does the MOSFET's configuration improve circuit design?
The single transistor configuration streamlines circuit layouts, reducing the number of required components while ensuring dependable operation in high-speed applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.