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INFINEON TECHNOLOGIESIRFP4227PBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.3VMaximum Continuous Drain Current 65A
Mã nhà sản xuất
IRFP4227PBF
Thương hiệu
Mã kho
650-4772
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon Motor Control MOSFET Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications. Synchronous Rectifier MOSFET A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems. Infineon HEXFET Series MOSFET, 65A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRFP4227PBF This MOSFET functions as a vital component in contemporary electronic applications, offering dependable control and switching for high-power systems. It delivers robust performance and efficiency, making it suitable for a variety of industrial tasks, particularly in settings where high thermal resistance and low conduction losses are essential. The enhancement mode design facilitates optimal operation under diverse conditions, thereby making it ideal for automation, electrical systems, and mechanical applications. Features & Benefits Provides 65A continuous drain current for intensive applications Operates efficiently at a maximum drain-source voltage of 200V Low RDS(on) contributes to energy efficiency during use Rated for high temperature tolerance up to 175°C Optimised for fast switching with minimal fall and rise times Offers excellent repetitive avalanche capability for enhanced system reliability Applications Utilised in energy recovery systems to enhance efficiency Compatible with PDP sustain for effective performance Suitable for high-power motor drive circuits requiring accurate control Employed in switching power supplies within automation processes Used in professional audio amplifiers for effective output handling What is the maximum current that can be handled at elevated temperatures? It can manage a continuous drain current of 46A at 100°C, ensuring functionality in tough environments. How does this component perform under pulsed conditions? The pulsed drain current can reach up to 130A, making it appropriate for transient applications. What are the cooling requirements when using this device? It has a thermal resistance of 0.45°C/W from junction to case, requiring effective heat dissipation mechanisms for optimal operation. What type of mounting is required for installation? Installation necessitates through-hole mounting, suitable for robust applications needing solid connections. How does the gate charge impact switching speed? It features a typical total gate charge of 70nC, enabling quick and efficient switching, which is crucial in high-speed applications. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

Motor Control MOSFET

Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET

A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

Infineon HEXFET Series MOSFET, 65A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRFP4227PBF

This MOSFET functions as a vital component in contemporary electronic applications, offering dependable control and switching for high-power systems. It delivers robust performance and efficiency, making it suitable for a variety of industrial tasks, particularly in settings where high thermal resistance and low conduction losses are essential. The enhancement mode design facilitates optimal operation under diverse conditions, thereby making it ideal for automation, electrical systems, and mechanical applications.

Features & Benefits

  • Provides 65A continuous drain current for intensive applications
  • Operates efficiently at a maximum drain-source voltage of 200V
  • Low RDS(on) contributes to energy efficiency during use
  • Rated for high temperature tolerance up to 175°C
  • Optimised for fast switching with minimal fall and rise times
  • Offers excellent repetitive avalanche capability for enhanced system reliability

Applications

  • Utilised in energy recovery systems to enhance efficiency
  • Compatible with PDP sustain for effective performance
  • Suitable for high-power motor drive circuits requiring accurate control
  • Employed in switching power supplies within automation processes
  • Used in professional audio amplifiers for effective output handling

What is the maximum current that can be handled at elevated temperatures?

It can manage a continuous drain current of 46A at 100°C, ensuring functionality in tough environments.

How does this component perform under pulsed conditions?

The pulsed drain current can reach up to 130A, making it appropriate for transient applications.

What are the cooling requirements when using this device?

It has a thermal resistance of 0.45°C/W from junction to case, requiring effective heat dissipation mechanisms for optimal operation.

What type of mounting is required for installation?

Installation necessitates through-hole mounting, suitable for robust applications needing solid connections.

How does the gate charge impact switching speed?

It features a typical total gate charge of 70nC, enabling quick and efficient switching, which is crucial in high-speed applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. IRFP4227PBF
Channel Type N
Maximum Continuous Drain Current 65A
Maximum Drain Source Voltage 200V
Series HEXFET
Package Type TO-247AC
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 25mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 5V
Minimum Gate Threshold Voltage 3V
Maximum Power Dissipation 330W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Number of Elements per Chip 1
Width 5.3mm
Length 15.9mm
Transistor Material Si
Typical Gate Charge @ Vgs 70 nC @ 10 V
Maximum Operating Temperature +175°C
Height 20.3mm
Forward Diode Voltage 1.3V
Minimum Operating Temperature -40°C

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